2SC2655L-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SC2655

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-013,F

ABSOLUTE MAXIMUM RATINGS ( TA=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Collector Current (Pulse) (Note 1)

ICP

Base Current

0.5

Collector Power Dissipation

SOT-23

350

TO-92NL

900

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. PW≦16ms, Duty Cycle≦50%.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS(TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Emitter Breakdown Voltage

BVCEO

IC= 10mA, IB= 0

Collector Cut-off Current

ICBO

VCB=50V, IE= 0

1.0

μA

Emitter Cut-off Current

IEBO

VEB= 5V, IC=0

1.0

μA

DC Current Gain

hFE(1)

VCE=2V, IC=0.5A

240

hFE(2)

VCE=2V, IC=1.5A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=0.05A

0.5

Base- Emitter Saturation Voltage

VBE(SAT)

IC=1A, IB=0.05A

1.2

Transition Frequency

VCE=2V, IC=0.5A

100

MHz

Collector Output Capacitance

COB

VCB= 10V, IE= 0, f=1MHz

Switching Time(Turn-on Time)

tON

IB1= -IB2=0.05A

DUTY CYCLE≦1%

0.1

μS

CLASSIFICATION OF hFE(1)

RANK

RANGE

70-140

120-240

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