2N80L-TM3-R datasheet(3/6 Pages) UTC

Nome de Peças	2N80L-TM3-R

Descrição Electrónicos	2A, 800V N-CHANNEL POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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3 / 6 page

2N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-480.C

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=640V,

ID=2.4A (Note 1,2)

Gate to Source Charge

QGS

2.6

Gate to Drain Charge

QGD

6.0

Turn-ON Delay Time

tD(ON)

VDD=400V, ID=2.4A,

RG=25Ω (Note 1,2)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

2.4

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

9.6

Drain-Source Diode Forward Voltage

VSD

IS=2.4A, VGS=0V

1.4

Reverse Recovery Time (Note 1)

tRR

IS=2.4A, VGS=0V,

dIF/dt=100A/µs

480

Reverse Recovery Charge (Note 1)

QRR

2.0

µC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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