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1N70ZL-T92-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças 1N70ZL-T92-R
Descrição Electrónicos  1.2A, 700V N-CHANNEL POWER MOSFET
PDF  7 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N70ZL-T92-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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1N70Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 7
www.unisonic.com.tw
QW-R502-723.B
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 2)
IDM
4.8
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
50
mJ
Repetitive (Note 2)
EAR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
3
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
79
℃
/W
Junction to Case
θJc
29
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700V, VGS = 0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 20V, VDS = 0V
+5
μA
Reverse
VGS = -20V, VDS = 0V
-5
μA
Breakdown Voltage Temperature Coefficient △BVDSS/T
△ J ID = 250μA
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.6A
9.3
13.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
120
150
pF
Output Capacitance
COSS
20
25
pF
Reverse Transfer Capacitance
CRSS
3.0
4.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=350V, ID=1.2A, RG=50Ω
(Note 2,3)
5
20
ns
Turn-On Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD(OFF)
7
25
ns
Turn-Off Fall Time
tF
25
60
ns
Total Gate Charge
QG
VDS=560V, VGS=10V,
ID=1.2A (Note 2,3)
5.0
6.0
nC
Gate-Source Charge
QGS
1.0
nC
Gate-Drain Charge
QGD
2.6
nC



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