DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC3357

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

Document No. PU10211EJ01V0DS (1st edition)

(Previous No. P10357EJ4V1DS00)

Date Published January 2003 CP(K)

Printed in Japan

The mark

•

•

•

• shows major revised points.

©

©

©

FEATURES

• Low noise and high gain

2

× 0.7 mm (t) ceramic substrate)

• Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC3357

25 pcs (Non reel)

• 12 mm wide embossed taping

2SC3357-T1

1 kpcs/reel

• Collector face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

Note

1.2

W

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 16 cm

2

× 0.7 mm (t) ceramic substrate