BSS131 datasheet(2/8 Pages) SIEMENS

Nome de Peças	BSS131

Descrição Electrónicos	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

PDF	8 Pages

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Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

Página de início	http://www.siemens.com/

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2 / 8 page

Semiconductor Group

Sep-13-1996

BSS 131

Maximum Ratings

Parameter

Symbol

Values

Unit

Chip or operating temperature

-55 ... + 150

°C

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip to ambient air

RthJA

≤ 350

K/W

Therminal resistance, chip-substrate- reverse side 1)

RthJSR

≤ 285

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

1) For package mounted on aluminium

15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

240

Gate threshold voltage

VGS=VDS, ID = 1 mA

VGS(th)

0.8

1.4

Zero gate voltage drain current

VDS = 240 V, VGS = 0 V, Tj = 25 °C

VDS = 240 V, VGS = 0 V, Tj = 125 °C

VDS = 130 V, VGS = 0 V, Tj = 25 °C

IDSS

0.1

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

Drain-Source on-state resistance

VGS = 10 V, ID = 0.1 A

VGS = 4.5 V, ID = 0.1 A

RDS(on)

Ω

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