BCR555 datasheet(2/4 Pages) SIEMENS

Nome de Peças	BCR555

Descrição Electrónicos	PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

Página de início	http://www.siemens.com/

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2 / 4 page

Semiconductor Group

Nov-27-1996

BCR 555

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO

Collector cutoff current

VCB = 40 V, IE = 0

ICBO

100

Emitter cutoff current

VEB = 5 V, IC = 0

IEBO

0.65

DC current gain

IC = 50 mA, VCE = 5 V

hFE

Collector-emitter saturation voltage 1)

IC = 50 mA, IB = 2.5 mA

VCEsat

0.3

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

0.4

Input on Voltage

IC = 10 mA, VCE = 0.3 V

Vi(on)

0.5

1.4

Input resistor

1.5

2.2

2.9

Ω

Resistor ratio

R1/R2

0.19

0.22

0.24

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

150

MHz

1) Pulse test: t < 300

µs; D < 2%

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