BCR166 datasheet(2/4 Pages) SIEMENS

Nome de Peças	BCR166

Descrição Electrónicos	PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

Página de início	http://www.siemens.com/

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2 / 4 page

Semiconductor Group

Nov-26-1996

BCR 166

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO

Collector cutoff current

VCB = 40 V, IE = 0

ICBO

100

Emitter cutoff current

VEB = 5 V, IC = 0

IEBO

155

µA

DC current gain

IC = 5 mA, VCE = 5 V

hFE

Collector-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

VCEsat

0.3

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

0.4

0.8

Input on Voltage

IC = 2 mA, VCE = 0.3 V

Vi(on)

0.5

1.4

Input resistor

3.2

4.7

6.2

Ω

Resistor ratio

R1/R2

0.09

0.1

0.11

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

160

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1) Pulse test: t < 300

µs; D < 2%

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