MJ15022 datasheet(1/4 Pages) ISC

Nome de Peças	MJ15022

Descrição Electrónicos	Silicon NPN Power Transistors

PDF	4 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ15022 MJ15024

DESCRIPTION

・With TO-3 package

・Complement to type MJ15023; MJ15025

・Excellent safe operating area

・High DC current gain

hFE = 15 (Min) @ IC = 8 Adc

APPLICATIONS

・Designed for high power audio, disk head

positioners and other linear applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJ15022

350

VCBO

Collector-base voltage

MJ15024

Open emitter

400

V

MJ15022

200

VCEO

Collector-emitter voltage

MJ15024

Open base

250

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

16

A

ICM

Collector current-peak

30

A

IB

Base current

5

A

PD

Total power dissipation

TC=25℃

250

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

0.70

℃/W

Fig.1 simplified outline (TO-3) and symbol

Nº de peça semelhante - MJ15022

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mospec Semiconductor	MJ15022	153Kb / 3P	POWER TRANSISTOR(16A,200-250V,250W)
Motorola, Inc	MJ15022	153Kb / 4P	Silicon Power Transistors
ON Semiconductor	MJ15022	153Kb / 4P	SILICON POWER TRANSISTORS 1995 REV 7
Wing Shing Computer Com...	MJ15022	159Kb / 1P	NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
ON Semiconductor	MJ15022	73Kb / 4P	Silicon Power Transistors February, 2006 ??Rev. 10

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Descrição semelhante - MJ15022

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Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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