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MJ3041 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças MJ3041
Descrição Electrónicos  isc Silicon NPN Darlingtion Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ3041 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  MJ3041 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJ3041 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
MJ3041
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 250 (Min) @ IC =2.5A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=300V(Min)
APPLICATIONS
·Developed for line operated amplifier, series pass and
Switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current -Continuous
10
A
PC
Collector Power Dissipation@TC=25℃
175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-55~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃/W
isc Website：www.iscsemi.cn


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