BUX32 datasheet(1/2 Pages) ISC

Nome de Peças	BUX32

Descrição Electrónicos	isc Silicon NPN Power Transistors

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUX32/A/B

DESCRIPTION

·High Switching Speed

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 400V (Min)-BUX32

= 450V (Min)-BUX32A

= 450V (Min)-BUX32B

·Low Saturation Voltage

APPLICATIONS

·Designed for off-line power supplies and are also well suited

for use in a wide range of inverter

or converter circuits and

pulse-width-modulated regulators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

BUX32

800

BUX32A

900

VCES

Collector- Emitter

Voltage(VBE= 0)

BUX32B

1000

V

BUX32

400

BUX32A

450

VCEO

Collector-Emitter

Voltage

BUX32B

500

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

10

A

IB

B

Base Current-Continuous

5

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

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