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BUV42A Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BUV42A
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV42A Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV42A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV42A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV42A
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.9V(Max.) @IC= 4A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
VBE=-1.5V
400
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
18
A
IB
B
Base Current-Continuous
2.5
A
IBM
Base Current- Peak
4
A
PC
Collector Power Dissipation
@TC=25℃
120
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.46
℃/W
isc Website：www.iscsemi.cn


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