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BUV10 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BUV10
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV10 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV10 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV10 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV10
DESCRIPTION
·High Switching Speed
·High Current Capability
APPLICATIONS
·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEX
Collector-Emitter Voltage
VBE= -1.5V
160
V
VCER
Collector-Emitter Voltage
RBE= 100Ω
140
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
30
A
IB
B
Base Current-Continuous
6
A
PC
Collector Power Dissipation
@TC=25℃
150
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W
isc Website：www.iscsemi.cn


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