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BUT12AX Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUT12AX Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT12AX DESCRIPTION ・ ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 6 A Ptot Total power dissipation TC=25℃ 23 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 55 K/W Fig.1 simplified outline (TO-220F) and symbol |
Nº de peça semelhante - BUT12AX |
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Descrição semelhante - BUT12AX |
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