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BU508DFI Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU508DFI Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DFI DESCRIPTION ・With TO-3PML package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A Ptot Total power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 2.5 ℃/W Fig.1 simplified outline (TO-3PML) and symbol |
Nº de peça semelhante - BU508DFI |
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Descrição semelhante - BU508DFI |
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