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BU505 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU505 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU505 DESCRIPTION ・With TO-220C package ・High voltage,high speed-switching APPLICATIONS ・For horizontal deflection circuits of color TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2.5 A ICM Collector current (peak) 4 A IB Base current 1 A IBM Base current(peak) 2 A Ptot Total power dissipation TC=25℃ 75 W Tj Max.operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.67 ℃/W |
Nº de peça semelhante - BU505 |
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Descrição semelhante - BU505 |
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