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BDY92 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças BDY92
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY92 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDY92 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDY92 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY92
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB=80V; IE=0
1.0
mA
ICEV
Collector Cutoff Current
VCE=80V;VBE=-1.5V
VCE=80V;VBE=-1.5V;TC=150℃
1.0
3.0
mA
IEBO
Emitter Cutoff current
VEB=6V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
30
120
hFE-3
DC Current Gain
IC= 10A ; VCE= 5V
20
fT
Current-Gain—Bandwidth Product
IC= 0.5 A;VCE= 5V;ftest = 5MHz
70
MHz
Switching Times
ton
Turn-On Time
0.35
μs
tstg
Storage Time
1.3
μs
tf
Fall Time
IC= 5A; IB1= -IB2= 0.5A,
VCC=30V
0.2
μs
isc Website：www.iscsemi.cn



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