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BD807 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BD807
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD807 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD807
DESCRIPTION
·DC Current Gain -
: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·Complement to Type BD808
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
B
Base Current
6
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.39
℃/W
isc Website：www.iscsemi.cn


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