BD250 datasheet(2/3 Pages) ISC

Nome de Peças	BD250

Descrição Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD250/A/B/C

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD250

-45

BD250A

-60

BD250B

-80

V(BR)CEO

Collector-emitter

breakdown voltage

BD250C

IC=-30mA ;IB=0

-100

VCEsat-1

Collector-emitter saturation voltage

IC=-15A ;IB=-1.5A

-1.8

VCEsat-2

Collector-emitter saturation voltage

IC=-25A ;IB=-5A

-4.0

VBE-1

Base-emitter on voltage

IC=-15A ; VCE=-4V

-1.6

VBE-2

Base-emitter on voltage

IC=-25A ; VCE=-4V

-3.0

BD250/250A

VCE=-30V IB=0

ICEO

Collector

cut-off current

BD250B/250C

VCE=-60V IB=0

-1.0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1.0

hFE-1

DC current gain

IC=-1.5A ; VCE=-4V

hFE-2

DC current gain

IC=-15A ; VCE=-4V

hFE-3

DC current gain

IC=-25A ; VCE=-4V

Switching times

ton

Turn-on time

0.2

μs

toff

Turn-off time

IC=-5A;

IB1=-IB2=-0.5A

RL=5Ω

0.4

μs

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