BD246 datasheet(1/3 Pages) ISC

Nome de Peças	BD246

Descrição Electrónicos	isc Silicon PNP Power Transistor

PDF	3 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD246/A/B/C

DESCRIPTION

·Collector Current -IC= -10A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A

-80V(Min)- BD246B; -100V(Min)- BD246C

·Complement to Type BD245/A/B/C

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD246

-55

BD246A

-70

BD246B

-90

VCER

Collector-Emitter

Voltage (RBE= 100Ω)

BD246C

-115

V

BD246

-45

BD246A

-60

BD246B

-80

VCEO

Collector-Emitter

Voltage

BD246C

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

B

Base Current

-3

A

Collector Power Dissipation

@ Ta=25℃

3

PC

Collector Power Dissipation

@ TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.56

℃/W

isc Website：www.iscsemi.cn

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