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2SD2488 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2488 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2488 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA 2.5 V VBEsat Base-emitter saturation voltage IC=10A ;IB=10mA 3.0 V ICBO Collector cut-off current VCB=200V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=10A ; VCE=4V 5000 30000 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 120 pF fT Transition frequency IE=-2A ; VCE=12V 70 MHz hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 |
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