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2SD2101 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2101 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2101 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA; IC=0 200 V V(BR)CEO Collector-emitter breakdown voltage IC=25mA;RBE=∞ 200 V VCEO(SUS) Collector-emitter sustaining voltage IC=5A; L=5mH 170 V VCE(sat-1) Collector-emitter saturation voltage IC=5A ;IB=10mA 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=100mA 3.0 V VBE(sat-1) Base-emitter saturation voltage IC=5A ;IB=10mA 2.0 V VBE(sat-2) Base-emitter saturation voltage IC=10A ;IB=100mA 3.5 V ICBO Collector cut-off current VCB=180V; IE=0 10 μA ICEO Collector cut-off current VCE=180V; RBE=∞ 50 μA hFE DC current gain IC=5A ; VCE=3V 1500 |
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