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2SD1345 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1345 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1345 DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB983 APPLICATIONS ·Inverters, converters ·Controllers for DC motor, pulse motor ·Switching power supplies ·General power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB B Base Current-Continuous 1.5 A IBM Base Current-Peak 4 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W isc Website:www.iscsemi.cn |
Nº de peça semelhante - 2SD1345 |
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Descrição semelhante - 2SD1345 |
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