| Os motores de busca de Datasheet de Componentes eletrônicos |
|
2SD1063 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1063 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1063 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE= ∞ 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 280 hFE-2 DC current gain IC=5A ; VCE=2V 30 fT Transition frequency IC=1A ; VCE=5V 10 MHz Switching times ton Turn-on time 0.20 μ s tstg Storage time 0.90 μ s tf Fall time IC=2.0A; IB1=-IB2=0.2A VCC=20V;RL=10Ω 0.30 μ s hFE-1 Classifications Q R S 70-140 100-200 140-280 |
|
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |