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2SD835 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD835 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD835 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 350 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA; IB= 0 B 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 15 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 10mA B 2.0 V ICBO Collector Cutoff Current VCB= 400V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 15V; IC=0 100 mA hFE DC Current Gain IC= 4A; VCE= 1.5V 400 Switching Times ton Turn-on Time 1.0 μ s tstg Storage Time 12.0 μ s tf Fall Time IC = 4A, IB1 =-IB2 = 40mA, RL = 10Ω; Pw = 20μs, DutyCycle≤2% 6.0 μ s isc Website:www.iscsemi.cn 2 |
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