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2SC4745 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4745 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4745 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 500 μA hFE DC Current Gain IC= 1A ; VCE= 5V 7 30 tf Fall Time ICP= 5A , IB1= 1A; fH= 64kHz 0.4 μs isc Website:www.iscsemi.cn 2 |
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