2SC4162 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4162

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

500

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA; RBE= ∞

400

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC= 4.5A; IB1= 0.45A, IB2= -1.8A,

L= 500μH, clamped

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 6A; IB= 1.6A

0.8

VBE(sat)

Base-Emitter Saturation Voltage

IC= 6A; IB= 1.6A

1.5

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

μA

hFE-1

DC Current Gain

IC= 1.6A; VCE= 5V

hFE-2

DC Current Gain

IC= 8A; VCE= 5V

hFE-3

DC Current Gain

IC= 10mA; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

120

Current-Gain—Bandwidth Product

IC= 1.6A; VCE= 10V

MHz

Switching Times

ton

Turn-On Time

0.5

μs

tstg

Storage Time

2.5

μs

Fall Time

IC= 7A; IB1= 1.4A; IB2= -2.8A;

VCC= 200V; RL= 28.6Ω

0.3

μs

hFE-1 Classifications

15-30

20-40

30-50

isc Website：www.iscsemi.cn

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