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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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2SC4110 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4110 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB B Base Current-Continuous 8 A Collector Power Dissipation @ TC=25℃ 160 PC Collector Power Dissipation @ Ta=25℃ 2.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn |
Nº de peça semelhante - 2SC4110 |
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Descrição semelhante - 2SC4110 |
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