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2SC3519 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3519 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC3519 160 VCBO Collector-Base Voltage 2SC3519A 180 V 2SC3519 160 VCEO Collector-Emitter Voltage 2SC3519A 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
Nº de peça semelhante - 2SC3519 |
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Descrição semelhante - 2SC3519 |
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