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2SC3357 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 2SC3357
Descrição Electrónicos  isc Silicon NPN RF Transistor
PDF  6 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3357 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3357
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP.
@VCE = 10 V, IC = 40 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
0.1
A
PC
Collector Power Dissipation
@TC=25℃
1.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn


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