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SWP4N65 Folha de dados(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

Nome de Peças SWP4N65
Descrição Electrónicos  N-channel MOSFET (TO-220F , TO-220)
PDF  7 Pages
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Fabricante Electrônico  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Página de início  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SWP4N65 Folha de dados(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
5
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
،ط Notes :
1. Z
¥èJC
(t) = 1.25 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
J
, Junction Temperature [
oC]
SW4N65
SAMWIN
4/7



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