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2SB1136 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1136 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1136 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 280 hFE-2 DC current gain IC=-5A ; VCE=-2V 30 fT Transition frequency IC=-1A ; VCE=-5V 10 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 0.4 μs tf Fall time IC=-2.0A IB1=-IB2=-0.2A 0.1 μs hFE-1 Classifications Q R S 70-140 100-200 140-280 |
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