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SW1N70A Folha de dados(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

Nome de Peças SW1N70A
Descrição Electrónicos  N-channel MOSFET
PDF  7 Pages
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Fabricante Electrônico  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Página de início  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW1N70A Folha de dados(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
T
C'
Case Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 0.5 A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
،ط Notes :
1. Z
¥èJC
(t) = 4.2 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
SW1N70A
SAMWIN
4/7



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