2SB903 datasheet(1/4 Pages) ISC

Nome de Peças	2SB903

Descrição Electrónicos	Silicon PNP Power Transistors

PDF	4 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB903

DESCRIPTION

・With TO-220 package

・Low collector saturation voltage

・Large current capacity.

・Complement to type 2SD1212

APPLICATIONS

・Suitable for relay drivers, high-speed

inverters,converters, and other genral

large current switching applications.

・High-speed switching applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-60

V

VCEO

Collector-emitter voltage

Open base

-30

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-12

A

ICM

Collector current-peak

-20

A

1.75

PC

Collector power dissipation

TC=25℃

35

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-220) and symbol

Nº de peça semelhante - 2SB903

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Sanyo Semicon Device	2SB903	105Kb / 3P	30V/12A High-Speed Switching Applications
Savantic, Inc.	2SB903	160Kb / 4P	Silicon PNP Power Transistors
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Savantic, Inc.	2SB903	162Kb / 4P	Silicon PNP Power Transistors
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Descrição semelhante - 2SB903

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2SB903 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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