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2SB856 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB856 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB856 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA ; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.2 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -4V 35 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -4V 35 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 35 MHz hFE-1 Classifications A B C 35-70 60-120 100-200 isc Website:www.iscsemi.cn 2 |
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