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2N6739 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6739 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2N6739 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regu- lators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 550 V VCEX Collector-Emitter Voltage-VBE= -1.5V 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A PC Collector Power Dissipation TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W |
Nº de peça semelhante - 2N6739 |
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Descrição semelhante - 2N6739 |
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