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2N6383 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6383 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6383 40 2N6384 60 VCBO Collector-base voltage 2N6385 Open emitter 80 V 2N6383 40 2N6384 60 VCEO Collector-emitter voltage 2N6385 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 0.25 A PD Total Power Dissipation TC=25℃ 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.75 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Nº de peça semelhante - 2N6383 |
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Descrição semelhante - 2N6383 |
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