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2N5630 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5630 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5629 100 VCBO Collector-base voltage 2N5630 Open emitter 120 V 2N5629 100 VCEO Collector-emitter voltage 2N5630 Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation TC=25℃ 200 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Nº de peça semelhante - 2N5630 |
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Descrição semelhante - 2N5630 |
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