2N5629 datasheet(2/3 Pages) ISC

Nome de Peças	2N5629

Descrição Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5629 2N5630

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N5629

100

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5630

IC=0.2A ;IB=0

120

VCEsat-1

Collector-emitter saturation voltage

IC=10A; IB=1A

1.0

VCEsat-2

Collector-emitter saturation voltage

IC=16A ;IB=4A

2.0

VBEsat

Base-emitter saturation voltage

IC=10A; IB=1A

1.8

VBE

Base-emitter on voltage

IC=8A ; VCE=2V

1.5

ICBO

Collector cut-off current

VCB=ratedVCBO; IE=0

1.0

2N5629

VCE=50V; IB=0

ICEO

Collector

cut-off current

2N5630

VCE=60V; IB=0

1.0

ICEV

Collector cut-off current

VCE=ratedVCB; VBE(off)=1.5V

TC=150℃

1.0

5.0

IEBO

Emitter cut-off current

VEB=7V; IC=0

1.0

2N5629

100

hFE-1

DC current gain

2N5630

IC=8A ; VCE=2V

hFE-2

DC current gain

IC=16A ; VCE=2V

COB

Output capacitance

IE=0 ; VCB=10V ;f=0.1MHz

500

Transition frequency

IC=1A ; VCE=20V

1.0

MHz

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