2N3771 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2N3771

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA ; IB= 0

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA ; RBE= 100Ω

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 15A; IB= 1.5A

2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 30A; IB= 6A

4.0

VBE(on)

Base-Emitter On Voltage

IC= 15A ; VCE= 4V

2.7

ICEO

Collector Cutoff Current

VCE= 30V; IB= 0

ICEV

Collector Cutoff Current

VCE= 50V; VBE(off)= 1.5V

VCE= 30V; VBE(off)= 1.5V,TC=150℃

2.0

ICBO

Collector Cutoff Current

VCB= 50V; IE= 0

2.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

5.0

hFE-1

DC Current Gain

IC= 15A ; VCE= 4V

hFE-2

DC Current Gain

IC= 30A ; VCE= 4V

Current-Gain

—Bandwidth Product

IC= 1A ; VCE= 4V ;ftest= 50kHz

0.2

MHz

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 40V,t= 1.0s,Nonrepetitive

3.75

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