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STM32F407IG Folha de dados(PDF) 112 Page - STMicroelectronics |
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STM32F407IG Folha de dados(HTML) 112 Page - STMicroelectronics |
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112 / 154 page ![]() Electrical characteristics STM32F405xx, STM32F407xx 112/154 Doc ID 022152 Rev 1 5.3.21 Temperature sensor characteristics 5.3.22 VBAT monitoring characteristics 5.3.23 Embedded reference voltage The parameters given in Table 68 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. Table 66. TS characteristics Symbol Parameter Min Typ Max Unit TL (1) VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope - 2.5 mV/°C V25 (1) Voltage at 25 °C - 0.76 V tSTART (2) Startup time - 6 10 µs TS_temp (3)(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs 1. Based on characterization, not tested in production. 2. Guaranteed by design, not tested in production. 3. Shortest sampling time can be determined in the application by multiple iterations. Table 67. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 2 - Er(1) Error on Q –1 - +1 % TS_vbat (2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design, not tested in production. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 68. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint (1) ADC sampling time when reading the internal reference voltage 10 - - µs VRERINT_s (2) Internal reference voltage spread over the temperature range VDD = 3 V - 3 5 mV TCoeff (2) Temperature coefficient - 30 50 ppm/°C tSTART (2) Startup time - 6 10 µs 1. Shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design, not tested in production. |
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