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LH5164AZ8 Folha de dados(PDF) 5 Page - Sharp Corporation |
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LH5164AZ8 Folha de dados(HTML) 5 Page - Sharp Corporation |
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5 / 9 page ![]() DATA RETENTION CHARACTERISTICS (TA = -30 to +60°C) PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT NOTE Data retention supply voltage VCCDR CE2 ≤ 0.2 V or CE1 ≥ VCCDR – 0.2 V 2.0 5.5 V 1 Data retention supply current ICCDR VCCDR = 3.0 V, CE2 ≤ 0.2 V or CE1 ≥ VCCDR – 0.2 V TA = 25 °C 0.2 µA TA = 60 °C 0.6 1 Chip disable to data retention tCDR 0ns Recovery time tR tRC ns 2 NOTES: 1. CE2 should be ≥ VCCDR - 0.2 V or ≤ 0.2 V. 2. tRC = Read cycle time tLZ1 tACE1 tOHZ DOUT DATA VALID OE tRC 5164AZ8-3 tOLZ NOTE: WE is "HIGH" level during the read cycle. tACE2 tAA tLZ2 CE1 CE2 tHZ1 tOE tOH tHZ2 ADDRESS Figure 3. Read Cycle CMOS 64K (8K ×× 8) Static RAM LH5164AZ8 5 |
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