UP2855G-AA3-R datasheet(2/3 Pages) UTC

2 / 3 page

UP2855

Preliminary

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R207-024.b

ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-180

Collector-Emitter Voltage

VCEO

-140

Emitter-Base Voltage

VEBO

-7

Continuous Collector Current (Note 1)

-4

Peak Pulse Current

ICM

-10

3.0 (Note 1)

Power Dissipation

1.6 (Note 2)

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCE

PARAMETER

SYMBOL

RATINGS

UNIT

42 (Note 1)

Junction to Ambient

θJA

78 (Note 2)

°C/W

Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided

2oz copper, in still air conditions.

2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided

1oz copper, in still air conditions.

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

VCBO

IC=-100μA

-180

-200

Collector-Emitter Breakdown Voltage

VCER

IC=-1μA, RB≤1kΩ

-180

-200

Collector-Emitter Breakdown Voltage

VCEO

IC=-10mA (Note 1)

-140

-160

Emitter-Base Breakdown Voltage

VEBO

IE=-100μA

-7.0

-8.0

VCB=-150V

-20

Collector Cut-Off Current

ICBO

VCB=-150V, Tamb=100°C

-0.5

μA

-20

Collector Cut-Off Current

ICER

VCB=-150V,

R≤1kΩ

Tamb=100°C

-0.5

μA

Emitter Cut-Off Current

IEBO

VEB=-6V

-10

IC=-0.1A, IB=-5mA

-40

-60

IC=-0.5A, IB=-50mA

-55

-80

IC=-1A, IB=-100mA

-85

-120

Collector-Emitter Saturation Voltage

(Note 1)

VCE(SAT)

IC=-3A, IB=-300mA

-275

-360

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-3A, IB=-300mA(Note 1)

-940

-1040

Base-Emitter Turn-On Voltage

VBE(ON)

IC=-3A, VCE=-5V (Note 1)

-830

-930

IC=-10mA, VCE=-5V

100

225

IC=-1A, VCE=-5V

100

200

300

IC=-3A, VCE=-5V

100

Static Forward Current Transfer

Ratio (Note 1)

hFE

IC=-10A, VCE=-5V

Transition Frequency

IC=-100mA, VCE=-10V

f=50MHz

120

MHz

Output Capacitance (Note 1)

COBO

VCB=-10V, f=1MHz

tON

Switching Times

tOFF

IC=-1A, VCC=-50V,

IB1=-IB2=-10mA

636

Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%.

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