Electrical characteristics (Tj=25°C unless otherwise specified)

Item

Symbol

Condition

Characteristics

Unit

Min.

Typ.

Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off

Forward on voltage

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse current

off-state current

Reverse current

Gate trigger current

Gate trigger voltage

On-state voltage

Forward on voltage

Reverse current

Resistance

B value

R

B

chip

terminal

Ω

chip

terminal

terminal

Ω

chip

terminal

chip

terminal

T=25°C

T=100°C

T=25/50°C

150

200

8.5

2.4

1.2

0.6

1.0

0.35

2.6

300

150

200

2.4

1.2

0.6

1.0

0.35

150

1.0

1.0

100

2.5

1.3

1.5

150

5000

5.5

7.8

µA

nA

V

V

pF

µs

V

ns

µA

nA

V

µs

µA

mA

mA

mA

V

V

V

µA

Ω

K

Item

Symbol

Condition

Characteristics

Unit

Min.

Typ.

Max.

Inverter IGBT

Inverter FWD

Brake IGBT

Thyristor

Converter Diode

With thermal compound

0.63

1.33

1.04

1.00

°C/W

0.90

0.05

Thermal resistance ( 1 device )

Rth(j-c)

Contact thermal resistance

*

Rth(c-f)

Thermal resistance Characteristics

IGBT Module

7MBR50SC060

* This is the value which is defined mounting on the additional cooling fin with thermal compound

1.8

1.95

0.45

0.25

0.40

0.05

1.75

1.9

1.8

1.95

0.45

0.25

0.40

0.05

1.1

1.2

1.1

1.2

5000

465

495

520

3305

3375

3450