SSG4841P datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

SSG4841P

-9.0 A, -40 V, RDS(ON) 35 m

P-Ch Enhancement Mode Power MOSFET

31-Dec-2010 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

-1

VDS= VGS, ID= -250μA

Gate-Body Leakage Current

IGSS

±100

VDS= 0V, VGS= ±25V

-1

μA

VDS= -24V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-5

μA

VDS= -24V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(on)

-50

VDS= -5V, VGS= -10V

VGS= -10V, ID= -9.0A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -7.2A

Forward Transconductance

gfs

VDS= -15V, ID= -9.0A

Diode Forward Voltage

VSD

-0.7

IS= -2.1A, VGS= 0V

Dynamic

Total Gate Charge

15.3

Gate-Source Charge

Qgs

5.2

Gate-Drain(“Miller”) Charge

Qgd

5.8

ID= -9.0A

VDS= -15V

VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD= -15V, ID= -1A

VGEN= -10V, RL= 15Ω

RG= 6Ω

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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