IRFY130 datasheet(1/2 Pages) SEME-LAB

Nome de Peças	IRFY130

Descrição Electrónicos	N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

PDF	2 Pages

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Fabricante Electrônico	SEME-LAB [Seme LAB]

Página de início	http://www.semelab.co.uk

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IRFY130

Prelim.4/98

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

VGS

Gate – Source Voltage

ID

Continuous Drain Current @ Tcase = 25°C

ID

Continuous Drain Current @ Tcase = 100°C

IDM

Pulsed Drain Current

PD

Power Dissipation @ Tcase = 25°C

Linear Derating Factor

TJ , Tstg

Operating and Storage Temperature Range

RqJC

Thermal Resistance Junction to Case

RqJA

Thermal Resistance Junction to Ambient

±20V

11A

7A

44A

45W

0.36W/°C

–55 to 150°C

2.8°C/W max.

80°C/W max.

MECHANICAL DATA

Dimensions in mm (inches)

2.54

BSC

10.41

10.67

3.56

3.81

Dia.

0.70

0.90

2.65

2.75

0.89

1.14

4.70

5.00

1 2 3

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

TO–220M – Metal Package

N–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

FEATURES

• HERMETICALLY SEALED TO–220 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• SCREENING OPTIONS AVAILABLE

• ALL LEADS ISOLATED FROM CASE

Pad 1 – Gate

Pad 2 – Drain

Pad 3 – Source

VDSS

100V

ID(cont)

11A

RDS(on)

0.19

W

Nº de peça semelhante - IRFY130

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