MMBTH10 datasheet(1/2 Pages) SECOS

Nome de Peças	MMBTH10

Descrição Electrónicos	NPN Epitaxial Planar Transistor

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de início	http://www.secosgmbh.com

Logo

1 / 2 page

Elektronische Bauelemente

MMBTH10

50 mA, 30 V

NPN Epitaxial Planar Transistor

01-June-2007 Rev. C

Page 1 of 2

1

Base

2

Emitter

Collector

3

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

DESCRIPTION

The MMBTH10 is designed for use in VHF & UHF oscillators

and VHF mixer in tuner of a TV receiver.

FEATURES

VHF/UHF Transistor

PACKAGING INFORMATION

Weight: 0.0078g (Approximately)

MARKING CODE

3EM

ABSOLUTE MAXIMUM RATINGS (at T

A = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector Power Dissipation

PC

225

mW

Collector Current - Continuous

IC

50

mA

Emitter - Base Voltage

VEBO

3

V

Collector - Emitter Voltage

VCEO

25

V

Collector - Base Voltage

VCBO

30

V

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

CHARACTERISTICS (at T

A = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector - Base Breakdown Voltage

V(BR)CBO

30

-

V

IC=100uA, IE=0

Collector - Emitter Breakdown Voltage

V(BR)CEO

25

-

V

IC=1mA, IB=0

Emitter - Base Breakdown Voltage

V(BR)EBO

3

-

V

IE=10uA, IC=0

Collector Cut - Off Current

ICBO

-

100

nA

VCB=25V, IE=0

Emitter Cut - Off Current

IEBO

-

100

nA

VEB=2V, IC=0

Collector - Emitter Saturation Voltage

VCE(sat)

-

500

mV

IC=4mA, IB=0.4mA

Base - Emitter Voltage

VBE

-

950

mV

VCE=10V, IC=4mA

DC Current Gain

hFE

60

-

VCE=10V, IC=4mA

Transition Frequency

fT

650

-

MHz

VCE=10V, IC=4mA, f=100MHz

Output Capacitance

Cob

-

0.70

pF

VCB=10V, IE=0, f=1MHz

Common - Base Feedback Capacitance

Crb

-

0.65

pF

VCB=10V, IE=0, f=1MHz

Collector Base Time Constant

Cc·rbb´

-

9

pS

VCB=10V, IC=4mA, f=31.8MHz

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.80

3.04

G

0.09

0.18

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.78

2.04

L

0.89

1.02

F

0.30

0.50

SOT-23

Nº de peça semelhante - MMBTH10

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	MMBTH10	71Kb / 6P	NPN RF Transistor
Diodes Incorporated	MMBTH10	55Kb / 2P	NPN SURFACE MOUNT VHF/UHF TRANSISTOR DS31031 Rev. 4 - 2
Weitron Technology	MMBTH10	224Kb / 5P	NPN Silicon VHF/UHF Transistor
Unisonic Technologies	MMBTH10	196Kb / 5P	RF TRANSISTOR
Fairchild Semiconductor	MMBTH10	502Kb / 14P	NPN RF Transistor

More results

Descrição semelhante - MMBTH10

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
KEC(Korea Electronics)	KTC3542T	90Kb / 3P	EPITAXIAL PLANAR NPN TRANSISTOR
Unisonic Technologies	2SC1384	70Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
Unisonic Technologies	2SD1609	85Kb / 4P	NPN EPITAXIAL PLANAR TRANSISTOR
List of Unclassifed Man...	GMBT5551	175Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
List of Unclassifed Man...	GMBTA42	194Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
GTM CORPORATION	GBC847	236Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
	GBC848	221Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
	GESD1060	424Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR
	GI41C	150Kb / 2P	NPN EPITAXIAL PLANAR TRANSISTOR
	GI122	161Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR

More results

MMBTH10 Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

MMBTH10 Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Nº de peça semelhante - MMBTH10

Descrição semelhante - MMBTH10

Html Pages

1 2

Folha de dados Download

Ligação URL