SEMIX503GB126HDS datasheet(2/5 Pages) SEMIKRON

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SEMiX503GB126HDs

Rev. 1 – 23.03.2011

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

Inverse diode

VF = VEC IF = 300 A

VGE =0 V

chip

Tj =25 °C

1.6

1.80

Tj =125 °C

1.6

1.8

VF0

Tj =25 °C

0.9

1.1

Tj =125 °C

0.7

0.8

0.9

Tj =25 °C

1.7

2.0

2.3

m

Tj =125 °C

2.3

2.7

3.0

m

IRRM

IF = 300 A

di/dtoff =6900 A/µs

VGE =-15 V

VCC = 600 V

Tj =125 °C

400

Qrr

Tj =125 °C

µC

Err

Tj =125 °C

32.5

Rth(j-c)

per diode

0.13

K/W

Module

LCE

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

m

TC =125 °C

1m

Rth(c-s)

per module

0.04

K/W

to heat sink (M5)

to terminals (M6)

2.5

300

Temperatur Sensor

R100

Tc=100°C (R25=5 k)

493 ± 5%



B100/125

R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];

3550

±2%

SEMiX® 3s

Trench IGBT Modules

SEMiX503GB126HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperatur limited to TC=125°C

max.

•Not for new design

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