IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60C2

IXGP16N60C2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Collector

3 - Emitter

TO-220 (IXGP) Outline

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

TO-263 (IXGA) Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

8

S

C

ies

657

pF

C

oes

V

62

pF

C

res

22

pF

Q

g(on)

25

nC

Q

ge

I

5

nC

Q

gc

13

nC

t

d(on)

16

ns

t

ri

17

ns

E

on

0.16

mJ

t

d(off)

75

ns

t

fi

33

ns

E

off

0.09

0.16 mJ

t

d(on)

16

ns

t

ri

18

ns

E

on

0.27

mJ

t

d(off)

115

ns

t

fi

100

ns

E

off

0.27

mJ

R

thJC

0.83

°C/W

R

thCK

TO-220

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2