IXFN66N50Q2 datasheet(1/5 Pages) IXYS

Nome de Peças	IXFN66N50Q2

Descrição Electrónicos	HiPerFET Power MOSFET Q2-Class

PDF	5 Pages

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Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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DS99077B(05/08)

V

DSS

= 500V

I

D25

= 66A

R

DS(on) ≤

≤≤≤≤ 80mΩ

Ω

t

rr

≤≤≤≤≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, Low

Intrinsic R

g, High dV/dt, Low trr

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

66

A

I

DM

T

C = 25°C, pulse width limited by TJM

264

A

I

A

T

C = 25°C

66

A

E

AS

T

C = 25°C

4

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

735

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

V

ISOL

50/60Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.3/ 11.5

Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200

nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

3

mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

80

m

Ω

HiPerFETTM

Power MOSFET

Q2-Class

IXFN66N50Q2

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

Double metal process for low

gate resistance

miniBLOC, with Aluminium nitride

isolation

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

Applications

DC-DC converters

Switched-mode and resonant-mode

power supplies

DC choppers

Pulse generators

Advantages

Easy to mount

Space savings

High power density

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