IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN50N80Q2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Note 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

32

48

S

C

iss

13.5

nF

C

oss

V

1180

pF

C

rss

213

pF

t

d(on)

26

ns

t

r

25

ns

t

d(off)

60

ns

t

f

13

ns

Q

g(on)

260

nC

Q

gs

V

56

nC

Q

gd

120

nC

R

thJC

0.11

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

50

A

I

SM

Repetitive, Pulse Width Limited by T

JM

200

A

V

SD

I

1.5

V

t

rr

300 ns

Q

RM

1.1

μC

I

RM

8.0

A

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V